Itheyibhile yepharamitha yemveliso
| Nd:Ce:Izalathi zobugcisa ze-YAG laser crystal rods |
| Doping concentration | Nd:0.1~1.4at%,Ce:0.05~0.1at% |
| Ukuqhelaniswa neCrystal | <111>+50 |
| Ugqithiso lwamaza ngaphambili | s0.1A/intshi |
| Umlinganiselo wokuphela | ≥25dB |
| Ubungakanani bemveliso | I-Diameter≤50mm, Ubude≤150 mmSlats kunye neediski zinokulungiswa ngokweemfuno zabathengi. |
| Ukunyamezela komgangatho | Ububanzi:+0.00/-0.05mm, Ubude:±0.5mm |
| Ukulungiswa komphezulu we-cylindrical | Ukusila kakuhle, ukupolisha, ukuthunga |
| Phelisa ukuhambelana kobuso | ≤ 10” |
| I-perpendicularity yobuso besiphelo kwi-axis yentonga | ≤ 5' |
| Phelisa ukuthamba kobuso | 入/10 @632.8nm |
| Umgangatho womphezulu | I-10-5 (MIL-0-13830A) |
| Chamfer | 0.15+0.05mm |
| Ukwaleka | S1/S2:R@1064nms0.2% |
| S1:R@1064nm≤0.2%,S2:R@1064=20+3% |
| S1:R@1064nm≤0.2%，S2:R@1064nmz99.8% |
| Ezinye iisistim zefilimu zinokulungiswa. |
| Umda womonakalo we-laser woluhlu lwefilimu | ≥500MW/cm2 |
| Ubude beLaser | 1064nm |
| I-Diode impompo yobude bewavenge | 808nm |
| Isalathiso sokuqhafaza | 1.8197@1064nm |
| ekhethekileyo | Ukunyibilika komphezulu |
| Ukuphelisa i-engile ye-wedge yobuso, i-concave/convex surface, njl. |
